{"id":10988,"date":"2022-12-13T08:45:46","date_gmt":"2022-12-13T07:45:46","guid":{"rendered":"https:\/\/imif.lukasiewicz.gov.pl\/?p=10988"},"modified":"2022-12-14T08:54:23","modified_gmt":"2022-12-14T07:54:23","slug":"boron-gan","status":"publish","type":"post","link":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/","title":{"rendered":"Our Scientists Were the First to Experimentally Prove that… [PUBLICATIONS]"},"content":{"rendered":"

Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice. Additionally, they investigated boron-induced defect levels in GaN for the first time. Why did they pay so much attention to it? Because GaN is the material of the future!<\/p>\n

\u2026And it is used in optoelectronics and electronics. Did you know that the popular light-emitting diodes (LEDs) are based on this semiconductor? Meaning: it\u2019s everywhere! And the latest research shows that it can even replace silicon in electronics.<\/p>\n

The versatility of this compound results from the possibility of combining it into more complicated ternary compounds, such as InGaN, AlGaN… and just BGaN. It is BGaN that our scientists are studying carefully.<\/p>\n

Their last two publications on this subject explain the nature of boron incorporation into the GaN lattice and its influence on structural, optical, and defect BGaN compound properties too.<\/p>\n

In addition, they have presented the effect of interstitial boron on photoluminescence in the orange light range! Such a range is difficult to achieve for GaN compounds and could help to develop GaN-based white LEDs.<\/p>\n

More about it in the publications below:<\/p>\n

Insights_on_boron_impact_on_structural_characteristics_in_epitaxially_grown_BGaN<\/a><\/p>\n

Effect_of_the_growth_temperature_on_the_formation_of_deep-level_defects_and_optical_properties_of_epitaxial_BGaN<\/a><\/p>\n<\/div><\/div><\/div><\/div><\/div>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":4,"featured_media":10991,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_seopress_robots_primary_cat":"none","_seopress_titles_title":"","_seopress_titles_desc":"","_seopress_robots_index":"","_lmt_disableupdate":"no","_lmt_disable":""},"categories":[86,157,149,196],"tags":[597,576,262],"yoast_head":"\nWe proved that boron is incorporated interstitial into the GaN lattice<\/title>\n<meta name=\"description\" content=\"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"We proved that boron is incorporated interstitial into the GaN lattice\" \/>\n<meta property=\"og:description\" content=\"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/\" \/>\n<meta property=\"og:site_name\" content=\"\u0141ukasiewicz \u2013 IMiF\" \/>\n<meta property=\"article:published_time\" content=\"2022-12-13T07:45:46+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2022-12-14T07:54:23+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2022\/12\/GaN_publication.webp\" \/>\n\t<meta property=\"og:image:width\" content=\"1500\" \/>\n\t<meta property=\"og:image:height\" content=\"784\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/webp\" \/>\n<meta name=\"author\" content=\"Angelina Sielewicz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Angelina Sielewicz\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/\",\"url\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/\",\"name\":\"We proved that boron is incorporated interstitial into the GaN lattice\",\"isPartOf\":{\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#website\"},\"datePublished\":\"2022-12-13T07:45:46+00:00\",\"dateModified\":\"2022-12-14T07:54:23+00:00\",\"author\":{\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3\"},\"description\":\"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.\",\"breadcrumb\":{\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Strona g\u0142\u00f3wna\",\"item\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Our Scientists Were the First to Experimentally Prove that… [PUBLICATIONS]\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#website\",\"url\":\"https:\/\/imif.lukasiewicz.gov.pl\/\",\"name\":\"\u0141ukasiewicz \u2013 IMiF\",\"description\":\"Instytut Mikroelektroniki i Fotoniki\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/imif.lukasiewicz.gov.pl\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"en-US\"},{\"@type\":\"Person\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3\",\"name\":\"Angelina Sielewicz\",\"url\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/author\/angelina-sielewicz\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"We proved that boron is incorporated interstitial into the GaN lattice","description":"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/","og_locale":"en_US","og_type":"article","og_title":"We proved that boron is incorporated interstitial into the GaN lattice","og_description":"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.","og_url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/","og_site_name":"\u0141ukasiewicz \u2013 IMiF","article_published_time":"2022-12-13T07:45:46+00:00","article_modified_time":"2022-12-14T07:54:23+00:00","og_image":[{"width":1500,"height":784,"url":"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2022\/12\/GaN_publication.webp","type":"image\/webp"}],"author":"Angelina Sielewicz","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Angelina Sielewicz","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/","url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/","name":"We proved that boron is incorporated interstitial into the GaN lattice","isPartOf":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/#website"},"datePublished":"2022-12-13T07:45:46+00:00","dateModified":"2022-12-14T07:54:23+00:00","author":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3"},"description":"Our scientists were the first to experimentally prove that boron is incorporated interstitial into the gallium nitride lattice.","breadcrumb":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/boron-gan\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Strona g\u0142\u00f3wna","item":"https:\/\/imif.lukasiewicz.gov.pl\/en\/"},{"@type":"ListItem","position":2,"name":"Our Scientists Were the First to Experimentally Prove that… [PUBLICATIONS]"}]},{"@type":"WebSite","@id":"https:\/\/imif.lukasiewicz.gov.pl\/#website","url":"https:\/\/imif.lukasiewicz.gov.pl\/","name":"\u0141ukasiewicz \u2013 IMiF","description":"Instytut Mikroelektroniki i Fotoniki","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/imif.lukasiewicz.gov.pl\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"en-US"},{"@type":"Person","@id":"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3","name":"Angelina Sielewicz","url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/author\/angelina-sielewicz\/"}]}},"modified_by":"Angelina Sielewicz","_links":{"self":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/10988"}],"collection":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/comments?post=10988"}],"version-history":[{"count":2,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/10988\/revisions"}],"predecessor-version":[{"id":11020,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/10988\/revisions\/11020"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media\/10991"}],"wp:attachment":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media?parent=10988"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/categories?post=10988"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/tags?post=10988"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}