{"id":14851,"date":"2023-09-04T08:49:24","date_gmt":"2023-09-04T06:49:24","guid":{"rendered":"https:\/\/imif.lukasiewicz.gov.pl\/?p=14851"},"modified":"2023-09-04T08:49:24","modified_gmt":"2023-09-04T06:49:24","slug":"gan-technology","status":"publish","type":"post","link":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/","title":{"rendered":"Is GaN Our Secret Gan?"},"content":{"rendered":"<p>We develop vertical transistors, intended for use in smart power banks, based on GaN. &#8220;Thanks to the use of our devices, smart energy banks can be smaller, more effective and, above all, more reliable compared to other solutions&#8221; \u2013 says Andrzej Taube, PhD, Eng, our researcher.<\/p>\n<p><strong>Advantages of using gallium nitride in power electronic systems:<\/strong><\/p>\n<ul>\n<li>high breakdown voltage \u2013 reduced dimensions<\/li>\n<li>higher frequency of operation \u2013 reduction of the size of passive elements in the systems<\/li>\n<li>up to 80% less weight and volume of systems<\/li>\n<li>smaller gate reload charge<\/li>\n<li>reduction of switching losses<\/li>\n<li>high operating temperature \u2013 lower cooling requirements<\/li>\n<li>lower system costs (even if GaN devices are more expensive than silicon equivalents)<\/li>\n<\/ul>\n<p><strong>Usage:<\/strong><\/p>\n<p>Consumer electronics, wireless charging, ICT sector, data centers, energy conversion and storage, controlling electric motors, LED lighting control.<\/p>\n<p><img class=\"lazyload alignnone size-full wp-image-14857\" src=\"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika.png\" data-orig-src=\"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika.png\" alt=\"GaN infographic\" width=\"800\" height=\"1600\" srcset=\"data:image\/svg+xml,%3Csvg%20xmlns%3D%27http%3A%2F%2Fwww.w3.org%2F2000%2Fsvg%27%20width%3D%27800%27%20height%3D%271600%27%20viewBox%3D%270%200%20800%201600%27%3E%3Crect%20width%3D%27800%27%20height%3D%271600%27%20fill-opacity%3D%220%22%2F%3E%3C%2Fsvg%3E\" data-srcset=\"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-150x300.png 150w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-200x400.png 200w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-400x800.png 400w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-512x1024.png 512w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-600x1200.png 600w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika-768x1536.png 768w, https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-infografika.png 800w\" data-sizes=\"auto\" data-orig-sizes=\"(max-width: 800px) 100vw, 800px\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>We develop vertical transistors, intended [&hellip;]<\/p>\n","protected":false},"author":4,"featured_media":14854,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_seopress_robots_primary_cat":"none","_seopress_titles_title":"","_seopress_titles_desc":"","_seopress_robots_index":"","_lmt_disableupdate":"","_lmt_disable":""},"categories":[86,653],"tags":[576,262,960],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v19.13 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Is GaN Our Secret Gan? - \u0141ukasiewicz \u2013 IMiF<\/title>\n<meta name=\"description\" content=\"We develop vertical transistors, intended for use in smart power banks, based on GaN (gallium nitride). 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Learn more!\",\"breadcrumb\":{\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Strona g\u0142\u00f3wna\",\"item\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Is GaN Our Secret Gan?\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#website\",\"url\":\"https:\/\/imif.lukasiewicz.gov.pl\/\",\"name\":\"\u0141ukasiewicz \u2013 IMiF\",\"description\":\"Instytut Mikroelektroniki i Fotoniki\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/imif.lukasiewicz.gov.pl\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"en-US\"},{\"@type\":\"Person\",\"@id\":\"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3\",\"name\":\"Angelina Sielewicz\",\"url\":\"https:\/\/imif.lukasiewicz.gov.pl\/en\/author\/angelina-sielewicz\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Is GaN Our Secret Gan? - \u0141ukasiewicz \u2013 IMiF","description":"We develop vertical transistors, intended for use in smart power banks, based on GaN (gallium nitride). Learn more!","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/","og_locale":"en_US","og_type":"article","og_title":"Is GaN Our Secret Gan? - \u0141ukasiewicz \u2013 IMiF","og_description":"We develop vertical transistors, intended for use in smart power banks, based on GaN (gallium nitride). Learn more!","og_url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/","og_site_name":"\u0141ukasiewicz \u2013 IMiF","article_published_time":"2023-09-04T06:49:24+00:00","og_image":[{"width":1200,"height":627,"url":"https:\/\/imif.lukasiewicz.gov.pl\/wp-content\/uploads\/2023\/09\/GaN-technologies.png","type":"image\/png"}],"author":"Angelina Sielewicz","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Angelina Sielewicz","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/","url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/","name":"Is GaN Our Secret Gan? - \u0141ukasiewicz \u2013 IMiF","isPartOf":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/#website"},"datePublished":"2023-09-04T06:49:24+00:00","dateModified":"2023-09-04T06:49:24+00:00","author":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3"},"description":"We develop vertical transistors, intended for use in smart power banks, based on GaN (gallium nitride). Learn more!","breadcrumb":{"@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/imif.lukasiewicz.gov.pl\/en\/gan-technology\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Strona g\u0142\u00f3wna","item":"https:\/\/imif.lukasiewicz.gov.pl\/en\/"},{"@type":"ListItem","position":2,"name":"Is GaN Our Secret Gan?"}]},{"@type":"WebSite","@id":"https:\/\/imif.lukasiewicz.gov.pl\/#website","url":"https:\/\/imif.lukasiewicz.gov.pl\/","name":"\u0141ukasiewicz \u2013 IMiF","description":"Instytut Mikroelektroniki i Fotoniki","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/imif.lukasiewicz.gov.pl\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"en-US"},{"@type":"Person","@id":"https:\/\/imif.lukasiewicz.gov.pl\/#\/schema\/person\/cb141956ec850680095aad56507beff3","name":"Angelina Sielewicz","url":"https:\/\/imif.lukasiewicz.gov.pl\/en\/author\/angelina-sielewicz\/"}]}},"modified_by":"Angelina Sielewicz","_links":{"self":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/14851"}],"collection":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/comments?post=14851"}],"version-history":[{"count":1,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/14851\/revisions"}],"predecessor-version":[{"id":14860,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/posts\/14851\/revisions\/14860"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media\/14854"}],"wp:attachment":[{"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/media?parent=14851"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/categories?post=14851"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/imif.lukasiewicz.gov.pl\/en\/wp-json\/wp\/v2\/tags?post=14851"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}