Since we have already developed the first generation of GaN HEMT transistors in the 650V voltage class and 10A current efficiency, it is time for another one. As a part of the GaNLIN project, led by our Institute, we are going to develop the next generation of GaN HEMT transistors. This research project aims to increase the maximum operating voltage and their current efficiency for our transistors. Their applications will be crazy wide and the demand for them is already huge!

We hope that the new generation of the above-mentioned devices will find more applications, not only in the construction of power supplies or car chargers but also in other industries, such as automotive, photovoltaic, or household appliances.

Łukasiewicz – IMiF along with Łukasiewicz – PORT Łukasiewicz – IEL, Łukasiewicz – PIT, and Łukasiewicz – ITR are going to work on a new class of transistors, also for power electronic systems and power modules.

The project leader is Ania Szerling, PhD, Andrzej Taube, PhD, is responsible for R&D works, and Piotr Cywiński, PhD, for commercialization. That’s a great team, we can’t wait for the outcome!

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Published On: 1 March 2023, 15:19|Categories: Aktualności, Centrum Nanotechnologii|Tags: , , |