There is no better place to express our love for gallium nitride (GaN) than Verona, the city of Romeo and Juliet. Together with other scientists and engineers from around the world, we gathered at the GaN Marathon conference to discuss the latest developments in GaN-based materials and devices. This year, we had the opportunity to present three posters showing the results of our GaN-related projects.

The conference, held from June 10-12, 2024, at the Hotel Due Torri, featured three keynote speakers and 32 invited speakers from Europe and overseas. Discussions covered topics such as GaN technologies in microwaves, 5G communication, power conversion, and optoelectronics. The atmosphere was so fantastic because the conference took place in a fantastic setting reminiscent of the book “The Two Towers”.

It was a real pleasure to meet our friends from other institutions, including Intel Corporation, Università degli Studi di Padova, and Lund University, among others, and make new friends from Japan’s Sumitomo Electrics and TOYOTA CENTRAL R&D LABS., INC., as well as Belgium’s Imec. We also saw how companies like Robert Bosch Tool Corporation NA and Infineon Technologies are mastering technologies to bring them to market. Importantly, we met many people at the conference with whom we will have the pleasure of building a pilot line of wide-gap materials and devices under the ChipsAct JU.
More details about this pilot line soon…

We bid farewell to Verona, but thanks to the GaN Marathon conference, we now have so much energy to work on gallium nitride that we could even  run a marathon.

Thank you Università degli Studi di Padova for the excellent organization!

“Arrivederci Verona, ma grazie alla conferenza GaN Marathon, ora abbiamo ancora più energia per lavorare sul nitruro di gallio.”